Ultra-low Interfacial Tension Regulation to Achieve Full-area Uniform WettingFeaturing a perfluorocarbon hydrophobic and oleophilic backbone as well as hydrophilic anionic groups, FS1630 boasts outstanding chemical stability without decomposition or performance failure in concentrated mixed acidic systems of hydrofluoric acid and nitric acid. After being dosed into the etchant, it reduces the solution surface tension from 65–72 mN/m to 18–22 mN/m and significantly cuts down the contact angle between etchant and silicon wafer surface.It completely eliminates unwetted blind zones on hydrophobic silicon surface, micro uneven structures, deep trenches and microchannels, enabling the etchant to spread evenly across wafer frontside, side edges and interior of microscopic pores. The formation of etching voids and white spot defects induced by local dry areas is prevented, laying a solid interfacial foundation for homogeneous etching.

Dynamic Balance Modulation of Etching Rate to Restrain Edge Over-etchingTraditional acidic etching is plagued by a common issue of faster etching speed at wafer edges yet slower rate at central regions, which frequently triggers edge collapse and dimensional deviation of silicon wafers. FS1630 molecules can form an ultra-thin and compact monomolecular adsorption film with dynamically reversible characteristics on silicon surfaces:Central area of silicon wafer: The adsorbed film moderately hinders intense acid-base reactions to slow down excessive etching speed;Edge area of silicon wafer: Dynamic replacement and consumption avoid accumulated film deposition and sustain continuous etching.Benefiting from balanced interfacial adsorption, the etching rate discrepancy between wafer center and edges is narrowed, with overall rate fluctuation controlled within ±3%, so as to precisely guarantee uniform wafer thickness and dimensional precision.

Emulsification & Dispersion for Impurity Removal to Eliminate Residual Etching DefectsInsoluble micro-residues such as silicate complexes and fluorosilicates are generated during acidic silicon etching, which tend to adhere to microscopic pores and result in hazy surfaces and residual contamination. Possessing superior emulsifying, dispersing and solubilizing capabilities, FS1630 stably disperses solid byproducts and particulate residues inside the etchant system to avoid agglomeration and surface adsorption.In addition, it lowers foam height of etching solution and improves filterability of the system, facilitating thorough impurity elimination via subsequent deionized water rinsing. This remarkably reduces silicon wafer surface roughness and elevates finished wafer yield.

Excellent Stability in Strong Acid-base Environment for Continuous Mass ProductionDifferent from conventional hydrocarbon surfactants, FS1630 features outstanding resistance against strong oxidation and highly acidic media. Under high-temperature etching environments with coexisting HF and HNO₃, it experiences no decomposition, precipitation or foam-induced deterioration. No metallic ions or organic impurities are introduced to cause secondary contamination on silicon substrates. Fully compliant with high-purity semiconductor manufacturing specifications, it is applicable to industrial continuous mass production.