With the popularization of 3D architectures such as FinFET and GAA in advanced 14nm and 7nm processes, the wafer surface features complex nano‑trenches and micropore structures. Conventional acid‑alkali cleaning systems face industry bottlenecks including high surface tension, poor permeability, easy corrosion of metal wiring, high residue levels and limited yield. Fluorocarbon Surfactant 1630 (C6 short‑chain amphoteric fluorocarbon) has become a core additive for precision cleaning of advanced semiconductors by virtue of ultra‑low interfacial activity, PFOS/PFOA‑free environmental performance and neutral mild system, and is widely applied for deep removal of photoresist residues, nano‑particles and organic contaminants.
Fluorocarbon Surfactant 1630 adopts a betaine‑type amphoteric fluorocarbon structure, with core advantages of ultra‑low surface tension, strong microscopic penetration, micellar solubilization and neutral non‑corrosiveness.
Super‑wetting and Penetration Mechanism
FS1630 can reduce the surface tension of pure water systems to 16–19 mN/m, far lower than traditional hydrocarbon surfactants. It can rapidly wet ultra‑micro trenches and sidewall dead corners of 1–20 nm, solving the problems of insufficient penetration and partial unclean cleaning caused by conventional cleaning solutions.
Contaminant Stripping and Encapsulation Mechanism
Fluorocarbon chains possess strong interfacial displacement capacity, which can strip cured photoresist residual films, organic carbon deposits and oily residues via the interfacial replacement effect. Meanwhile, nano‑micelles are formed at low concentrations to firmly encapsulate silicon powder and oxide micro‑particles, preventing re‑adsorption and greatly improving the overall cleanliness of wafers.
Non‑corrosive Process Compatibility Mechanism
FS1630 stably functions in the neutral pH range of 6.5–7.5. It does not corrode copper, aluminum or tungsten metal circuits, nor damage high‑k dielectric layers or photoresist films, making it perfectly compatible with 7nm/14nm precision structures.
Low‑residue and Easy‑to‑rinse Property
The C6 short‑chain structure leaves no long‑term fluorine residues, features controllable foam and easy rinsing, does not affect subsequent film deposition and etching processes, and meets ultra‑high cleanliness standards for advanced processes.
Photoresist Residue Cleaning System (Neutral and Low‑corrosive)
Fluorocarbon Surfactant 1630: 0.1–0.3%
Non‑ionic wetting additive: 0.2–0.5%
Co‑solvent (Propylene Glycol Methyl Ether): 3–5%
Metal ion chelating agent: 0.05–0.1%
Ultrapure water: Balance
